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| MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-2H * * * * * IC Collector current ........................ 300A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 2-M6 2-M4 108MAX. 930.3 E 16 20 BX 9 20 B C 62MAX. 4-6.5 E BX 480.3 C B 13 21 29 25.5MAX. LABEL 36MAX. 41.5MAX. Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 300 300 1980 16 3000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 1.96~2.94 20~30 0.98~1.47 10~15 0.98~1.47 10~15 460 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*m N*m kg*cm N*m kg*cm g Mounting screw M6 -- Mounting torque B terminal screw M4 BX terminal screw M4 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=300A, IB=6A -IC=300A (diode forward voltage) IC=300A, VCE=2.8V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=600V, IC=300A, IB1=-IB2=6A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 4.0 4.0 400 2.5 3.5 1.85 -- 3.0 15 3.0 0.063 0.3 0.04 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 500 IB=8.0A 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) Tj=25C Tj=125C VCE=5.0V COLLECTOR CURRENT IC (A) IB=4.0A 400 IB=2.0A 300 IB=1.0A IB=0.4A DC CURRENT GAIN hFE VCE=2.8V 200 100 Tj=25C 0 1 2 3 4 5 0 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) BASE CURRENT IB (A) 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 -1 1.8 VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 2 7 IB=6A 5 Tj=25C Tj=125C 3 2 10 1 7 5 3 2 10 0 7 5 3 2 VCE=2.8V Tj=25C SATURATION VOLTAGE VBE(sat) VCE(sat) 2.2 2.6 3.0 3.4 3.8 10 -1 10 0 2 3 4 5 710 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 Tj=25C Tj=125C IC=400A SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 2 7 VCC=600V 5 IB1=-IB2=6A Tj=25C 3 Tj=125C 2 10 1 7 5 3 2 10 0 7 5 3 2 ton ts 3 SWITCHING TIME ton, ts, tf (s) 2 IC=200A IC=300A tf 1 0 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10-1 2 3 4 5 7 10 0 VCC=600V IB1=6A IC=300A Tj=25C Tj=125C ts REVERSE BIAS SAFE OPERATING AREA 800 COLLECTOR CURRENT IC (A) ts, tf (s) 600 IB2=-12A 400 Tj=125C IB2=-6A SWITCHING TIME tf 200 2 3 4 5 7 10 1 0 0 200 400 600 800 1000 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 TC=25C 2 NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 100 50S 90 100S DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) DERATING FACTOR (%) DC 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA 200 S COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 0.08 0.07 0.06 1m S 80 100 120 140 160 VCE (V) CASE TEMPERATURE TC (C) 10 3 7 5 3 2 10 2 7 5 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C Zth (j-c) (C/ W) 0.05 0.04 0.03 0.02 0.01 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 710 0 10 1 7 5 3 2 10 0 0 0.4 0.8 1.2 1.6 2.0 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 3200 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 5 3 2 Irr (A), Qrr (c) 10 2 7 5 3 2 VCC=600V IB1=-IB2=6A Tj=25C Tj=125C 10 2 Irr Qrr 10 1 trr (s) FORWARD CURRENT IF (A) Feb.1999 2800 2400 2000 1600 1200 800 400 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 trr 10 1 10 0 7 5 3 2 10 0 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 0.40 0.32 Zth (j-c) (C/ W) 0.24 0.16 0.08 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) |
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